Manufacturer Product Number:
NVH4L070N120M3S
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NVH4L070N120M3S-DG
Description:
SILICON CARBIDE (SIC) MOSFET-ELI
Detailed Description:
N-Channel 1200 V 34A (Tc) 160W (Tc) Through Hole TO-247-4L
Inventory:
13256104
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NVH4L070N120M3S Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.4V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Datasheet & Documents
Datasheets
Additional Information
Other Names
488-NVH4L070N120M3S
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
NTH4L070N120M3S
MANUFACTURER
onsemi
QUANTITY AVAILABLE
422
DiGi PART NUMBER
NTH4L070N120M3S-DG
UNIT PRICE
5.81
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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