NTH4L070N120M3S
Manufacturer Product Number:

NTH4L070N120M3S

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

NTH4L070N120M3S-DG

Description:

SILICON CARBIDE (SIC) MOSFET EL
Detailed Description:
N-Channel 1200 V 34A (Tc) 160W (Tc) Through Hole TO-247-4L

Inventory:

422 Pcs New Original In Stock
13256065
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NTH4L070N120M3S Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.4V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

Datasheet & Documents

Additional Information

Other Names
488-NTH4L070N120M3S
Standard Package
450

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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