NVH4L030N120M3S
Manufacturer Product Number:

NVH4L030N120M3S

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

NVH4L030N120M3S-DG

Description:

SILICON CARBIDE (SIC) MOSFET-ELI
Detailed Description:
N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-4L

Inventory:

430 Pcs New Original In Stock
13256153
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

NVH4L030N120M3S Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
39mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
4.4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

Datasheet & Documents

Additional Information

Other Names
488-NVH4L030N120M3S
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
microchip-technology

APTM10SKM05TG

MOSFET N-CH 100V 278A SP4

microchip-technology

APTM20UM04SAG

MOSFET N-CH 200V 417A SP6

onsemi

NVBG040N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

NTHL075N065SC1

SILICON CARBIDE (SIC) MOSFET - E