Manufacturer Product Number:
NVBG040N120M3S
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NVBG040N120M3S-DG
Description:
SILICON CARBIDE (SIC) MOSFET-ELI
Detailed Description:
N-Channel 1200 V 57A (Tc) 263W (Tc) Surface Mount D2PAK-7
Inventory:
800 Pcs New Original In Stock
13256175
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NVBG040N120M3S Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
54mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Datasheet & Documents
Datasheets
Additional Information
Other Names
488-NVBG040N120M3STR
488-NVBG040N120M3SDKR
488-NVBG040N120M3SCT
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
DIGI Certification
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