RQ3E180BNTB1
Manufacturer Product Number:

RQ3E180BNTB1

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

RQ3E180BNTB1-DG

Description:

NCH 30V 39A MIDDLE POWER MOSFET:
Detailed Description:
N-Channel 30 V 18A (Ta), 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)

Inventory:

2820 Pcs New Original In Stock
12998306
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RQ3E180BNTB1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN
Base Product Number
RQ3E180

Datasheet & Documents

Datasheets

Additional Information

Other Names
846-RQ3E180BNTB1CT
846-RQ3E180BNTB1DKR
846-RQ3E180BNTB1TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
RQ3E180BNTB1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
2820
DiGi PART NUMBER
RQ3E180BNTB1-DG
UNIT PRICE
0.60
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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