Manufacturer Product Number:
NTH4L030N120M3S
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NTH4L030N120M3S-DG
Description:
SILICON CARBIDE (SIC) MOSFET EL
Detailed Description:
N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-4L
Inventory:
415 Pcs New Original In Stock
13256034
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NTH4L030N120M3S Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
39mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
4.4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Datasheet & Documents
Datasheets
Additional Information
Other Names
488-NTH4L030N120M3S
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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