Manufacturer Product Number:
PSMN018-100ESFQ
Product Overview
Manufacturer:
NXP Semiconductors
DiGi Electronics Part Number:
PSMN018-100ESFQ-DG
Description:
NEXPERIA PSMN018 - NEXTPOWER 100
Detailed Description:
N-Channel 100 V 53A (Ta) 111W (Ta) Through Hole I2PAK
Inventory:
4976 Pcs New Original In Stock
12996452
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PSMN018-100ESFQ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
53A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
21.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1482 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
111W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-PSMN018-100ESFQ-954
Standard Package
751
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
DIGI Certification
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