Manufacturer Product Number:
R8009KNXC7G
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R8009KNXC7G-DG
Description:
HIGH-SPEED SWITCHING NCH 800V 9A
Detailed Description:
N-Channel 800 V 9A (Ta) 59W (Tc) Through Hole TO-220FM
Inventory:
1871 Pcs New Original In Stock
12996459
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R8009KNXC7G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
59W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Base Product Number
R8009
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-R8009KNXC7GDKR
846-R8009KNXC7GTR
846-R8009KNXC7GDKRINACTIVE
846-R8009KNXC7GCT
846-R8009KNXC7GDKR-DG
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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