Manufacturer Product Number:
XP60AN750IN
Product Overview
Manufacturer:
YAGEO XSEMI
DiGi Electronics Part Number:
XP60AN750IN-DG
Description:
MOSFET N-CH 600V 10A TO220CFM
Detailed Description:
N-Channel 600 V 10A (Tc) 1.92W (Ta), 36.7W (Tc) Through Hole TO-220CFM
Inventory:
1000 Pcs New Original In Stock
13001984
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XP60AN750IN Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Tube
Series
XP60AN750
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
59.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2688 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
1.92W (Ta), 36.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220CFM
Package / Case
TO-220-3 Full Pack
Base Product Number
XP60
Datasheet & Documents
Datasheets
Additional Information
Other Names
5048-XP60AN750IN
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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