Manufacturer Product Number:
SUM60030E-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SUM60030E-GE3-DG
Description:
MOSFET N-CH 80V 120A TO263
Detailed Description:
N-Channel 80 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)
Inventory:
12919490
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SUM60030E-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
141 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7910 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SUM60030
Datasheet & Documents
Datasheets
Additional Information
Other Names
SUM60030E-GE3TR
SUM60030E-GE3CT
SUM60030E-GE3DKR
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FDB86135
MANUFACTURER
onsemi
QUANTITY AVAILABLE
1600
DiGi PART NUMBER
FDB86135-DG
UNIT PRICE
2.94
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
SI7674DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
SUM85N15-19-E3
MOSFET N-CH 150V 85A TO263
SUM75N15-18P-E3
MOSFET N-CH 150V 75A TO263