Manufacturer Product Number:
SQJ418EP-T1_BE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SQJ418EP-T1_BE3-DG
Description:
N-CHANNEL 100-V (D-S) 175C MOSFE
Detailed Description:
N-Channel 100 V 48A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Inventory:
9000 Pcs New Original In Stock
12977814
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SQJ418EP-T1_BE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-SQJ418EP-T1_BE3CT
742-SQJ418EP-T1_BE3DKR
742-SQJ418EP-T1_BE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SQJ476EP-T1_BE3
N-CHANNEL 100-V (D-S) 175C MOSFE
SI2333DDS-T1-BE3
P-CHANNEL 12-V (D-S) MOSFET
SIHA21N60EF-GE3
N-CHANNEL 600V
