Manufacturer Product Number:
SISS66DN-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SISS66DN-T1-GE3-DG
Description:
MOSFET N-CH 30V 49.1/178.3A PPAK
Detailed Description:
N-Channel 30 V 49.1A (Ta), 178.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Inventory:
5690 Pcs New Original In Stock
12916977
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SISS66DN-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
49.1A (Ta), 178.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.38mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
85.5 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3327 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
5.1W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS66
Datasheet & Documents
Datasheets
Additional Information
Other Names
SISS66DN-T1-GE3TR
742-SISS66DN-T1-GE3TR
SISS66DN-T1-GE3CT
742-SISS66DN-T1-GE3CT
SISS66DN-T1-GE3DKR-DG
SISS66DN-T1-GE3DKR
SISS66DN-T1-GE3TR-DG
SISS66DN-T1-GE3CT-DG
2266-SISS66DN-T1-GE3TR
742-SISS66DN-T1-GE3DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SI1330EDL-T1-GE3
MOSFET N-CH 60V 240MA SC70-3
SUM120N04-1M7L-GE3
MOSFET N-CH 40V 120A TO263
IXFT26N50Q
MOSFET N-CH 500V 26A TO268
