SISS63DN-T1-GE3
Manufacturer Product Number:

SISS63DN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SISS63DN-T1-GE3-DG

Description:

MOSFET P-CH 20V 35.1/127.5A PPAK
Detailed Description:
P-Channel 20 V 35.1A (Ta), 127.5A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Inventory:

37687 Pcs New Original In Stock
13141847
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SISS63DN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen III
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
35.1A (Ta), 127.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
236 nC @ 8 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
7080 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS63

Datasheet & Documents

Datasheets
SISS63DN

Additional Information

Other Names
742-SISS63DN-T1-GE3CT
742-SISS63DN-T1-GE3DKR
742-SISS63DN-T1-GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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