SISA66DN-T1-GE3
Manufacturer Product Number:

SISA66DN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SISA66DN-T1-GE3-DG

Description:

MOSFET N-CH 30V 40A PPAK1212-8
Detailed Description:
N-Channel 30 V 40A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Inventory:

RFQ Online
12786293
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SISA66DN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3014 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SISA66

Datasheet & Documents

Datasheets
SISA66DN-T1-GE3

Additional Information

Standard Package
3,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
vishay-siliconix

SQJ403BEEP-T1_GE3

MOSFET P-CH 30V 30A PPAK SO-8

vishay-siliconix

SIHA20N50E-E3

MOSFET N-CH 500V 19A TO220

vishay-siliconix

SUD35N10-26P-E3

MOSFET N-CH 100V 35A TO252

vishay-siliconix

SISA34DN-T1-GE3

MOSFET N-CH 30V 40A PPAK1212-8