SIS890DN-T1-GE3
Manufacturer Product Number:

SIS890DN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIS890DN-T1-GE3-DG

Description:

MOSFET N-CH 100V 30A PPAK1212-8
Detailed Description:
N-Channel 100 V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Inventory:

38385 Pcs New Original In Stock
12916096
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIS890DN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
23.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
802 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS890

Datasheet & Documents

Additional Information

Other Names
SIS890DN-T1-GE3DKR
SIS890DN-T1-GE3TR
SIS890DN-T1-GE3CT
SIS890DNT1GE3
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
vishay-siliconix

SQJ409EP-T1_GE3

MOSFET P-CH 40V 60A PPAK SO-8

vishay-siliconix

SIE818DF-T1-E3

MOSFET N-CH 75V 60A 10POLARPAK

vishay-siliconix

SQJ401EP-T1_GE3

MOSFET P-CH 12V 32A PPAK SO-8

vishay-siliconix

SI7421DN-T1-GE3

MOSFET P-CH 30V 6.4A PPAK 1212-8