Manufacturer Product Number:
SIR582DP-T1-RE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIR582DP-T1-RE3-DG
Description:
N-CHANNEL 80 V (D-S) MOSFET POWE
Detailed Description:
N-Channel 80 V 28.9A (Ta), 116A (Tc) 5.6W (Ta), 92.5W (Tc) Surface Mount PowerPAK® SO-8
Inventory:
1850 Pcs New Original In Stock
12974576
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SIR582DP-T1-RE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen V
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
28.9A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3360 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
5.6W (Ta), 92.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-SIR582DP-T1-RE3DKR
742-SIR582DP-T1-RE3CT
742-SIR582DP-T1-RE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
RS6P100BHTB1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
2725
DiGi PART NUMBER
RS6P100BHTB1-DG
UNIT PRICE
1.35
SUBSTITUTE TYPE
Similar
PART NUMBER
RS6N120BHTB1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
1763
DiGi PART NUMBER
RS6N120BHTB1-DG
UNIT PRICE
1.14
SUBSTITUTE TYPE
Similar
DIGI Certification
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