SIJ482DP-T1-GE3
Manufacturer Product Number:

SIJ482DP-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIJ482DP-T1-GE3-DG

Description:

MOSFET N-CH 80V 60A PPAK SO-8
Detailed Description:
N-Channel 80 V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

Inventory:

12919240
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SIJ482DP-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2425 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 69.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIJ482

Datasheet & Documents

Additional Information

Other Names
SIJ482DP-T1-GE3DKR
SIJ482DP-T1-GE3DKRINACTIVE
SIJ482DP-T1-GE3TR
SIJ482DP-T1-GE3DKR-DG
SIJ482DP-T1-GE3CT
SIJ482DPT1GE3
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
RS6N120BHTB1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
1763
DiGi PART NUMBER
RS6N120BHTB1-DG
UNIT PRICE
1.14
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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