Manufacturer Product Number:
SIHW21N80AE-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHW21N80AE-GE3-DG
Description:
MOSFET N-CH 800V 17.4A TO247AD
Detailed Description:
N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-247AD
Inventory:
12917391
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SIHW21N80AE-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1388 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Base Product Number
SIHW21
Datasheet & Documents
Datasheets
Additional Information
Other Names
2266-SIHW21N80AE-GE3
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
SIHG21N80AE-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
495
DiGi PART NUMBER
SIHG21N80AE-GE3-DG
UNIT PRICE
2.08
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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