SIHU5N50D-GE3
Manufacturer Product Number:

SIHU5N50D-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHU5N50D-GE3-DG

Description:

MOSFET N-CH 500V 5.3A TO251
Detailed Description:
N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-251AA

Inventory:

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12787571
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SIHU5N50D-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
SIHU5

Datasheet & Documents

Product Drawings
TO-251AA (IPAK) Pkg Drawing
Datasheets
SIHU5N50D-GE3

Additional Information

Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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