SIHP35N60E-BE3
Manufacturer Product Number:

SIHP35N60E-BE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHP35N60E-BE3-DG

Description:

N-CHANNEL 600V
Detailed Description:
N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB

Inventory:

131 Pcs New Original In Stock
12977763
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SIHP35N60E-BE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2760 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

Datasheet & Documents

Datasheets
SIHP35N60E

Additional Information

Other Names
742-SIHP35N60E-BE3CT
742-SIHP35N60E-BE3CT-DG
742-SIHP35N60E-BE3
742-SIHP35N60E-BE3TR-DG
742-SIHP35N60E-BE3DKRINACTIVE
742-SIHP35N60E-BE3CTINACTIVE
742-SIHP35N60E-BE3TR
Standard Package
1,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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