SIE810DF-T1-GE3
Manufacturer Product Number:

SIE810DF-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIE810DF-T1-GE3-DG

Description:

MOSFET N-CH 20V 60A 10POLARPAK
Detailed Description:
N-Channel 20 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Inventory:

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SIE810DF-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
13000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE810

Datasheet & Documents

Datasheets
SIE810DF-T1-GE3

Additional Information

Other Names
SIE810DF-T1-GE3CT
SIE810DF-T1-GE3DKR
SIE810DF-T1-GE3-DG
SIE810DF-T1-GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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