SIA417DJ-T1-GE3
Manufacturer Product Number:

SIA417DJ-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIA417DJ-T1-GE3-DG

Description:

MOSFET P-CH 8V 12A PPAK SC70-6
Detailed Description:
P-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Inventory:

RFQ Online
12914814
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SIA417DJ-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA417

Additional Information

Other Names
SIA417DJ-T1-GE3DKR
SIA417DJ-T1-GE3CT
SIA417DJT1GE3
SIA417DJ-T1-GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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