Manufacturer Product Number:
SI7852DP-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI7852DP-T1-GE3-DG
Description:
MOSFET N-CH 80V 7.6A PPAK SO-8
Detailed Description:
N-Channel 80 V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Inventory:
2134 Pcs New Original In Stock
12917049
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SI7852DP-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SI7852
Datasheet & Documents
Datasheets
Additional Information
Other Names
SI7852DP-T1-GE3DKR
SI7852DP-T1-GE3CT
SI7852DP-T1-GE3-DG
SI7852DP-T1-GE3TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
RS6N120BHTB1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
1763
DiGi PART NUMBER
RS6N120BHTB1-DG
UNIT PRICE
1.14
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
SI7104DN-T1-GE3
MOSFET N-CH 12V 35A PPAK 1212-8
SIHA100N60E-GE3
MOSFET N-CH 600V 30A TO220
SI5853CDC-T1-E3
MOSFET P-CH 20V 4A 1206-8
