SI4829DY-T1-GE3
Manufacturer Product Number:

SI4829DY-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI4829DY-T1-GE3-DG

Description:

MOSFET P-CH 20V 2A 8SO
Detailed Description:
P-Channel 20 V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SOIC

Inventory:

RFQ Online
12919089
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SI4829DY-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
LITTLE FOOT®
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
215mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
210 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4829

Additional Information

Other Names
SI4829DY-T1-GE3CT
SI4829DYT1GE3
SI4829DY-T1-GE3TR
SI4829DY-T1-GE3DKR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
vishay-siliconix

SIHU3N50D-E3

MOSFET N-CH 500V 3A TO251AA

vishay-siliconix

SIHD6N65ET4-GE3

MOSFET N-CH 650V 7A TO252AA

vishay-siliconix

SI5402BDC-T1-GE3

MOSFET N-CH 30V 4.9A 1206-8

vishay-siliconix

SI4838DY-T1-E3

MOSFET N-CH 12V 17A 8SO