SI4153DY-T1-GE3
Manufacturer Product Number:

SI4153DY-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI4153DY-T1-GE3-DG

Description:

P-CHANNEL 30-V (D-S) MOSFET SO-8
Detailed Description:
P-Channel 30 V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

Inventory:

2121 Pcs New Original In Stock
12975051
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SI4153DY-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen III
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14.3A (Ta), 19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 5.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

Datasheet & Documents

Additional Information

Other Names
742-SI4153DY-T1-GE3TR
742-SI4153DY-T1-GE3CT
742-SI4153DY-T1-GE3DKR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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