Manufacturer Product Number:
SI1011X-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI1011X-T1-GE3-DG
Description:
MOSFET P-CH 12V SC89-3
Detailed Description:
P-Channel 12 V 480mA (Ta) 190mW (Ta) Surface Mount SC-89-3
Inventory:
12913409
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SI1011X-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
640mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
62 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
190mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89-3
Package / Case
SC-89, SOT-490
Base Product Number
SI1011
Datasheet & Documents
Datasheets
Additional Information
Other Names
SI1011X-T1-GE3DKR
SI1011X-T1-GE3CT
SI1011X-T1-GE3TR
SI1011XT1GE3
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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