IRF820PBF-BE3
Manufacturer Product Number:

IRF820PBF-BE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

IRF820PBF-BE3-DG

Description:

MOSFET N-CH 500V 2.5A TO220AB
Detailed Description:
N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB

Inventory:

12972448
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IRF820PBF-BE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF820

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-IRF820PBF-BE3
Standard Package
1,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IRF820PBF
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
1744
DiGi PART NUMBER
IRF820PBF-DG
UNIT PRICE
0.47
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
Related Products
panjit

PJW5P06A_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

panjit

PJQ4414P_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

goford-semiconductor

G01N20LE

MOSFET N-CH ESD 200V 1.7A SOT-23

wolfspeed

C3M0045065J1

650V 45 M SIC MOSFET