Manufacturer Product Number:
IRF610PBF
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
IRF610PBF-DG
Description:
MOSFET N-CH 200V 3.3A TO220AB
Detailed Description:
N-Channel 200 V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
Inventory:
24957 Pcs New Original In Stock
12909789
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IRF610PBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF610
Datasheet & Documents
Datasheets
Additional Information
Other Names
*IRF610PBF
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IRFR430ATRLPBF
MOSFET N-CH 500V 5A DPAK
IRFR310
MOSFET N-CH 400V 1.7A DPAK
IXTQ460P2
MOSFET N-CH 500V 24A TO3P
