Manufacturer Product Number:
TPH3207WS
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TPH3207WS-DG
Description:
GANFET N-CH 650V 50A TO247-3
Detailed Description:
N-Channel 650 V 50A (Tc) 178W (Tc) Through Hole TO-247-3
Inventory:
13445537
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TPH3207WS Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 8V
Vgs(th) (Max) @ Id
2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
2197 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
178W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Additional Information
Standard Package
30
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
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