Manufacturer Product Number:
TP65H150G4LSG
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TP65H150G4LSG-DG
Description:
GAN FET N-CH 650V PQFN
Detailed Description:
N-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 3-PQFN (8x8)
Inventory:
2939 Pcs New Original In Stock
13275976
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TP65H150G4LSG Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
Tray
Series
-
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
598 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerTDFN
Base Product Number
TP65H150
Additional Information
Other Names
1707-TP65H150G4LSG
1707-TP65H150G4LSGDKR
1707-TP65H150G4LSGCT
Standard Package
3,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TP65H150G4LSG-TR
MANUFACTURER
Transphorm
QUANTITY AVAILABLE
2884
DiGi PART NUMBER
TP65H150G4LSG-TR-DG
UNIT PRICE
2.18
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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