Manufacturer Product Number:
TP65H070G4PS
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TP65H070G4PS-DG
Description:
GANFET N-CH 650V 29A TO220
Detailed Description:
N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB
Inventory:
210 Pcs New Original In Stock
12992579
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TP65H070G4PS Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
Tube
Series
SuperGaN®
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4.7V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
638 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
1707-TP65H070G4PS
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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