Manufacturer Product Number:
TP65H035G4WS
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TP65H035G4WS-DG
Description:
GANFET N-CH 650V 46.5A TO247-3
Detailed Description:
N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
Inventory:
813 Pcs New Original In Stock
12938528
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TP65H035G4WS Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
Tube
Series
SuperGaN™
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 0 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TP65H035
Datasheet & Documents
Datasheets
Additional Information
Other Names
1707-TP65H035G4WS
Standard Package
30
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
MCM1567-TP
MOSFET P-CH 20V 9A DFN2020-6J
AOB160A60L
MOSFET N-CH 600V 24A TO263
RFD16N05NL
N-CHANNEL POWER MOSFET
