Manufacturer Product Number:
TK12E60W,S1VX
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK12E60W,S1VX-DG
Description:
MOSFET N CH 600V 11.5A TO-220
Detailed Description:
N-Channel 600 V 11.5A (Ta) 110W (Tc) Through Hole TO-220
Inventory:
50 Pcs New Original In Stock
12891143
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TK12E60W,S1VX Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
DTMOSIV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK12E60
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK12E60WS1VX
TK12E60W,S1VX(S
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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