Manufacturer Product Number:
RN2911,LF
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN2911,LF-DG
Description:
TRANS 2PNP PREBIAS 0.2W US6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Inventory:
3000 Pcs New Original In Stock
12891422
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RN2911,LF Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
RN2911
Datasheet & Documents
Datasheets
Additional Information
Other Names
RN2911LF(CTTR-DG
RN2911LF(CTDKR-DG
RN2911LF(CTTR
RN2911LFTR
RN2911LF(CTCT-DG
RN2911LF(CTDKR
RN2911,LF(CB
RN2911LF(CTCT
RN2911,LF(CT
RN2911LFCT
RN2911LFDKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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