Manufacturer Product Number:
RN1966FE(TE85L,F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1966FE(TE85L,F)-DG
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Inventory:
4000 Pcs New Original In Stock
12890239
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RN1966FE(TE85L,F) Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1966
Additional Information
Other Names
RN1966FE(TE85LF)DKR
RN1966FETE85LF
RN1966FE(TE85LF)TR
RN1966FE(TE85LF)CT
Standard Package
4,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Alternative Models
PART NUMBER
RN1106MFV,L3F
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
53233
DiGi PART NUMBER
RN1106MFV,L3F-DG
UNIT PRICE
0.01
SUBSTITUTE TYPE
Similar
DIGI Certification
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