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Manufacturer Product Number:
RN1905FE,LF(CT
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1905FE,LF(CT-DG
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Inventory:
133 Pcs New Original In Stock
12890930
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SUBMIT
RN1905FE,LF(CT Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1905
Datasheet & Documents
Datasheets
RN1901FE-06FE
Additional Information
Other Names
RN1905FE(TE85LF)TR-DG
RN1905FE(TE85LF)DKR-DG
RN1905FE(TE85LF)CT-DG
RN1905FELF(CBDKR
RN1905FELF(CBTR-DG
RN1905FELF(CBCT
RN1905FELF(CTTR
RN1905FELF(CBDKR-DG
RN1905FE,LF(CB
RN1905FE(TE85LF)TR
RN1905FELF(CTCT
RN1905FE(TE85LF)DKR
RN1905FELF(CBCT-DG
RN1905FE(TE85L,F)
RN1905FELF(CBTR
RN1905FELF(CTDKR
RN1905FE(TE85LF)CT
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
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QUANTITY AVAILABLE
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