Manufacturer Product Number:
RN1706JE(TE85L,F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1706JE(TE85L,F)-DG
Description:
TRANS 2NPN PREBIAS 0.1W ESV
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV
Inventory:
12891281
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RN1706JE(TE85L,F) Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
ESV
Base Product Number
RN1706
Datasheet & Documents
Datasheets
Additional Information
Other Names
RN1706JE(TE85LF)DKR
RN1706JE(TE85LF)CT
RN1706JE(TE85LF)TR
Standard Package
4,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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