Manufacturer Product Number:
HN4C51J(TE85L,F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
HN4C51J(TE85L,F)-DG
Description:
TRANS 2NPN 120V 0.1A SMV
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Base 120V 100mA 100MHz 300mW Surface Mount SMV
Inventory:
6983 Pcs New Original In Stock
12891919
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HN4C51J(TE85L,F) Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 NPN (Dual) Common Base
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Supplier Device Package
SMV
Base Product Number
HN4C51
Datasheet & Documents
Datasheets
Additional Information
Other Names
HN4C51J (TE85LF)
HN4C51JTE85LF
HN4C51J(TE85LF)DKR
HN4C51J(TE85LF)CT
HN4C51J (TE85L,F)
HN4C51J(TE85LF)TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
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