HN1C03FU-A(TE85L,F
Manufacturer Product Number:

HN1C03FU-A(TE85L,F

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

HN1C03FU-A(TE85L,F-DG

Description:

TRANS 2NPN 20V 0.3A US6
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 200mW Surface Mount US6

Inventory:

12889810
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HN1C03FU-A(TE85L,F Technical Specifications

Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
300mA
Voltage - Collector Emitter Breakdown (Max)
20V
Vce Saturation (Max) @ Ib, Ic
100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 4mA, 2V
Power - Max
200mW
Frequency - Transition
30MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
HN1C03

Datasheet & Documents

Datasheets

Additional Information

Other Names
HN1C03FU-A(TE85LFDKR
HN1C03FU-A(TE85LFCT
HN1C03FU-A(TE85LFTR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Alternative Models

PART NUMBER
QSX8TR
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
300
DiGi PART NUMBER
QSX8TR-DG
UNIT PRICE
0.17
SUBSTITUTE TYPE
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