Manufacturer Product Number:
HN1C03F-B(TE85L,F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
HN1C03F-B(TE85L,F)-DG
Description:
TRANS 2NPN 20V 0.3A SM6
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 300mW Surface Mount SM6
Inventory:
12890747
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HN1C03F-B(TE85L,F) Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
300mA
Voltage - Collector Emitter Breakdown (Max)
20V
Vce Saturation (Max) @ Ib, Ic
100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 4mA, 2V
Power - Max
300mW
Frequency - Transition
30MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN1C03
Datasheet & Documents
Datasheets
Additional Information
Other Names
HN1C03F-B(TE85LF)TR
HN1C03F-B(TE85LF)CT
HN1C03F-B(TE85LF)DKR
HN1C03F-B (TE85L,F)
Standard Package
3,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Alternative Models
PART NUMBER
IMX25T110
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
6202
DiGi PART NUMBER
IMX25T110-DG
UNIT PRICE
0.09
SUBSTITUTE TYPE
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