Manufacturer Product Number:
HN1B01FU-Y(L,F,T)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
HN1B01FU-Y(L,F,T)-DG
Description:
TRANS NPN/PNP 50V 0.15A US6
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
Inventory:
12891097
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HN1B01FU-Y(L,F,T) Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Active
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Power - Max
200mW
Frequency - Transition
120MHz
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
HN1B01
Datasheet & Documents
Datasheets
Additional Information
Other Names
HN1B01FU-Y(LFT)DKR
HN1B01FU-Y(LFT)CT
HN1B01FU-Y(LFT)TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Alternative Models
PART NUMBER
UMZ1NTR
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
109445
DiGi PART NUMBER
UMZ1NTR-DG
UNIT PRICE
0.05
SUBSTITUTE TYPE
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DIGI Certification
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