Manufacturer Product Number:
2SB1481(TOJS,Q,M)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SB1481(TOJS,Q,M)-DG
Description:
TRANS PNP 100V 4A TO220NIS
Detailed Description:
Bipolar (BJT) Transistor PNP 100 V 4 A 2 W Through Hole TO-220NIS
Inventory:
12889863
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2SB1481(TOJS,Q,M) Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)
2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A, 2V
Power - Max
2 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SB1481
Additional Information
Other Names
2SB1481(TOJSQM)
2SB1481TOJSQM
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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