Manufacturer Product Number:
2SA1869-Y(Q,M)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SA1869-Y(Q,M)-DG
Description:
TRANS PNP 50V 3A TO220NIS
Detailed Description:
Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS
Inventory:
12889794
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2SA1869-Y(Q,M) Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA, 2V
Power - Max
10 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SA1869
Additional Information
Other Names
2SA1869YQM
2SA1869-Y(QM)
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Alternative Models
PART NUMBER
2SA2097(TE16L1,NQ)
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
72
DiGi PART NUMBER
2SA2097(TE16L1,NQ)-DG
UNIT PRICE
0.25
SUBSTITUTE TYPE
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