TSM80N1R2CL
Manufacturer Product Number:

TSM80N1R2CL

Product Overview

Manufacturer:

Taiwan Semiconductor Corporation

DiGi Electronics Part Number:

TSM80N1R2CL-DG

Description:

800V, 5.5A, SINGLE N-CHANNEL POW
Detailed Description:
N-Channel 800 V 5.5A (Tc) 110W (Tc) Through Hole I2PAK

Inventory:

12999364
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TSM80N1R2CL Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
685 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
TSM80

Datasheet & Documents

Additional Information

Other Names
1801-TSM80N1R2CL
Standard Package
4,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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