Manufacturer Product Number:
STD2HNK60Z-1
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STD2HNK60Z-1-DG
Description:
MOSFET N-CH 600V 2A IPAK
Detailed Description:
N-Channel 600 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Inventory:
3054 Pcs New Original In Stock
12878482
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STD2HNK60Z-1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
SuperMESH™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STD2HNK60
Datasheet & Documents
Datasheets
Additional Information
Other Names
497-12783-5
STD2HNK60Z1
STD2HNK60Z-1-DG
Standard Package
75
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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