A1F25M12W2-F1
Manufacturer Product Number:

A1F25M12W2-F1

Product Overview

Manufacturer:

STMicroelectronics

DiGi Electronics Part Number:

A1F25M12W2-F1-DG

Description:

SIC 4N-CH 1200V 50A ACEPACK1
Detailed Description:
Mosfet Array 1200V 50A Chassis Mount ACEPACK 1

Inventory:

12787806
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

A1F25M12W2-F1 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
STMicroelectronics
Packaging
Tray
Series
-
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
50A
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
4.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
147nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
3500pF @ 800V
Power - Max
-
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
ACEPACK 1

Datasheet & Documents

Datasheets

Additional Information

Other Names
497-A1F25M12W2-F1
Standard Package
18

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
onsemi

FDMS3602S-P

MOSFET 2N-CH 25V 15A/30A 8PQFN

goford-semiconductor

G120N03D32

MOSFET 2N-CH 30V 28A 8DFN

wise-integration

WI62195

GANFET 2P-CH 750V 9A 14QFN

rohm-semi

HT8KE5TB1

MOSFET 2N-CH 100V 2.5A/7A 8HSMT