Manufacturer Product Number:
SCT2750NYTB
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
SCT2750NYTB-DG
Description:
SICFET N-CH 1700V 5.9A TO268
Detailed Description:
N-Channel 1700 V 5.9A (Tc) 57W (Tc) Surface Mount TO-268
Inventory:
13526682
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SCT2750NYTB Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
975mOhm @ 1.7A, 18V
Vgs(th) (Max) @ Id
4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
275 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
SCT2750
Datasheet & Documents
Reliability Documents
Datasheets
Additional Information
Other Names
SCT2750NYTBDKR
SCT2750NYTBTR
SCT2750NYTBCT
Standard Package
400
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
G2R1000MT17J
MANUFACTURER
GeneSiC Semiconductor
QUANTITY AVAILABLE
13576
DiGi PART NUMBER
G2R1000MT17J-DG
UNIT PRICE
5.86
SUBSTITUTE TYPE
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