Manufacturer Product Number:
SCT2450KEGC11
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
SCT2450KEGC11-DG
Description:
1200V, 10A, THD, SILICON-CARBIDE
Detailed Description:
N-Channel 1200 V 10A (Tc) 85W (Tc) Through Hole TO-247N
Inventory:
141 Pcs New Original In Stock
12996728
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SCT2450KEGC11 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id
4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
463 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
175°C
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT2450
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-SCT2450KEGC11
Standard Package
450
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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