RQ3G110ATTB
Manufacturer Product Number:

RQ3G110ATTB

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

RQ3G110ATTB-DG

Description:

PCH -40V -35A, HSMT8, POWER MOSF
Detailed Description:
P-Channel 40 V 11A (Ta), 35A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Inventory:

8639 Pcs New Original In Stock
12967385
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RQ3G110ATTB Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.4mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2750 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN
Base Product Number
RQ3G110

Datasheet & Documents

Datasheets

Additional Information

Other Names
846-RQ3G110ATTBTR
846-RQ3G110ATTBCT
846-RQ3G110ATTBDKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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