Manufacturer Product Number:
R6535ENZ4C13
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R6535ENZ4C13-DG
Description:
650V 35A TO-247, LOW-NOISE POWER
Detailed Description:
N-Channel 650 V 35A (Tc) 379W (Tc) Through Hole TO-247G
Inventory:
571 Pcs New Original In Stock
12996280
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R6535ENZ4C13 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id
4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
379W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247G
Package / Case
TO-247-3
Base Product Number
R6535
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-R6535ENZ4C13
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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